| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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26 pcs
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26 pcs | On Request | 1 | On Request | On Request | 1107 | On Request | On Request |
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The MJ15016G is a PNP bipolar junction transistor manufactured by On Semiconductor. It is suitable for high-voltage and high-current switching and amplification applications. The device can operate within a junction temperature range of -65°C to +200°C and has a maximum power dissipation of 115W. Its collector-emitter voltage is rated at 120V, making it suitable for power regulation and switching circuits. The package type is TO-204, which is designed for through-hole mounting. The transistor features a minimum DC current gain (hFE) of 10 at 4A and 2V, and a collector cutoff current of 0.1 mA at 60V. It is designed for use in power amplifiers, motor control, and other high-power electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage rating is 120 Vdc.
The maximum collector current is 15 A.
The maximum power dissipation is 115 W.
The operating and storage junction temperature range is -65°C to +200°C.
The minimum DC current gain (hFE) is 10 at 4A, 2V.