SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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9 pcs
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9 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJ15016 from Motorola Semiconductor is a high-power NPN bipolar junction transistor (BJT). It is designed for robust performance in demanding applications, offering a collector-emitter breakdown voltage of 250V and a maximum continuous collector current of 16A. With a maximum power dissipation of 250W, this transistor is suitable for power amplification and switching circuits.
The MJ15016 features a transition frequency of 4MHz and a minimum DC current gain (hFE) of 15 at 8A and 4V. The saturation voltage (Vce Sat) is specified at 4V maximum when operating at 3.2A base current and 16A collector current. It operates within a wide temperature range of -65°C to 200°C.
This component is packaged in a TO-204 (TO-3) case and utilizes through-hole mounting. Its robust construction and electrical characteristics make it a reliable choice for power supply circuits, audio amplifiers, and other high-current applications where durability and performance are critical.
| Qty | Low | High |
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| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the MJ15016 is 250V.
The maximum continuous collector current for the MJ15016 is 16A.
The MJ15016 has a maximum power dissipation rating of 250W.
The MJ15016 operates within a temperature range of -65°C to 200°C.
The MJ15016 is designed for through-hole mounting.
The minimum DC current gain (hFE) for the MJ15016 is 15 at 8A and 4V.
