| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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32 pcs
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32 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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18 pcs
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18 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJ15015 is a high-power NPN bipolar junction transistor (BJT) manufactured by Motorola Semiconductor. It is designed for applications requiring significant current handling capabilities, featuring a maximum collector current of 20A and a maximum power dissipation of 250W.
Key electrical characteristics include a collector-emitter breakdown voltage of 140V and a saturation voltage of 1V at 500mA collector current and 5A base current. The transistor has a transition frequency of 2MHz and a minimum DC current gain (hFE) of 25 at 5A collector current and 2V collector-emitter voltage. The maximum collector cutoff current is 250µA.
This component is housed in a TO-204 (TO-3) package, suitable for through-hole mounting. Its robust construction and electrical specifications make it suitable for power amplification and switching applications in various electronic circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MJ15015 is an NPN bipolar transistor.
The maximum collector current is 20A.
The maximum Vce breakdown voltage is 140V.
The maximum power dissipation is 250W.
The transition frequency is 2MHz.
The minimum DC current gain is 25 at 5A collector current and 2V Vce.
The transistor is offered in TO-204 (TO-3) package with TO-204AA case outline.