| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,019 pcs
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2019 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The MJ15011 is a PNP Bipolar Junction Transistor (BJT) manufactured by Motorola Semiconductor. This component is designed for power applications, featuring a high collector-emitter breakdown voltage of 140V and a maximum continuous collector current of 20A.
With a maximum power dissipation of 250W and a transition frequency of 2MHz, the MJ15011 is suitable for various amplification and switching tasks. Its DC current gain (hFE) is a minimum of 25 at 5A and 2V, with a Vce saturation of 1V at 500mA and 5A.
The transistor is housed in a TO-204 (TO-3) package, designed for through-hole mounting. This package type is common for power transistors requiring efficient heat dissipation.
Environmental compliance includes RoHS3 compliance, MSL 1 rating, and REACH unaffected status. These specifications make the MJ15011 a robust choice for power electronics designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage for the MJ15011 is 140V.
The MJ15011 has a maximum continuous collector current rating of 20A.
The MJ15011 transistor has a maximum power dissipation of 250W.
The MJ15011 is supplied in a TO-204 (TO-3) package.
The MJ15011 is designed for through-hole mounting.