MJ15001G The ON Semiconductor MJ15001G is an NPN power transistor designed for high power audio and linear applications. It features a 140V collector-emitter voltage and 15A continuous collector current.
Mfr Part #:

MJ15001G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJ15001G is an NPN power transistor designed for high power audio and linear applications. It features a 140V collector-emitter voltage and 15A continuous collector current.
Total Stock: 8,500 pcs
$ Price Range: $0.99

MJ15001G Available from 1 distributor

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MJ15001G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Maximum Lead Temperature for Soldering Purposes
Mounting Type
Operating Temperature
Pb-Free
Power
Power Dissipation (Maximum @ TC=25 °C)
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage
voltage (Minimum @ IC = 200 mAdc, IB = 0)

MJ15001G Description

Short technical summary and product information.

The ON Semiconductor MJ15001G is a complementary silicon power transistor designed for demanding linear applications such as high power audio amplifiers and disk head positioners. This NPN transistor offers a high Safe Operating Area and is suitable for low distortion complementary designs.

 

Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 140 Vdc and a continuous collector current (IC) of 15 Adc. It can handle a total power dissipation of 200 W at 25°C case temperature. The device exhibits a high DC current gain (hFE) of 25 at 4A and 2V, with a Vce saturation of 1V at 400mA and 4A.

 

The MJ15001G is housed in a TO-204AA (TO-3) package, suitable for through-hole mounting. It operates across a wide junction temperature range of -65°C to +200°C. The transistor is Pb-Free and RoHS Compliant, making it suitable for modern electronic designs.

 

This component is ideal for applications requiring robust power handling and linear performance. Its complementary nature with the MJ15002 (PNP) allows for easy implementation in push-pull amplifier stages.

MJ15001G Quick Information

Product Type: NPN Power Transistor
Canonical Name: MJ15001G NPN Power Transistor
Subcategory: Single

MJ15001G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJ15001G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJ15001G Features

  • NPN power transistor for linear applications.
  • 140V collector-emitter voltage rating.
  • 15A continuous collector current.
  • 200W total power dissipation.
  • TO-204AA (TO-3) package for through-hole mounting.

MJ15001G Applications

  • High power audio amplifier circuits.
  • Disk head positioner systems.
  • General linear power applications.
  • Complementary push-pull designs.

MJ15001G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJ15001G?

The maximum collector-emitter voltage (VCEO) for the MJ15001G is 140 Vdc.

What is the continuous collector current rating of the MJ15001G?

The MJ15001G has a continuous collector current (IC) rating of 15 Adc.

What is the power dissipation of the MJ15001G transistor?

The total power dissipation (PD) for the MJ15001G is 200 W at a case temperature of 25°C.

What is the operating temperature range for the MJ15001G?

The operating and storage junction temperature range for the MJ15001G is -65°C to +200°C.

What package type is the MJ15001G supplied in?

The MJ15001G is supplied in a TO-204AA, also known as TO-3, package.

Is the MJ15001G RoHS compliant?

Yes, the MJ15001G is RoHS3 Compliant.

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