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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,700 pcs
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4700 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJ13333 is a high-power NPN bipolar junction transistor manufactured by Solid State Devices Inc (SSDI). It is designed for applications requiring significant voltage and current handling capabilities, featuring a maximum collector-emitter voltage of 400V and a continuous collector current of 20A. The transistor dissipates up to 275W of power.
This device is supplied in a TO-3 (TO-204AA) package, which is suitable for through-hole mounting and provides robust thermal management for high-power operation. The MJ13333 exhibits a minimum DC current gain (hFE) of 10 at 5A collector current and 5V collector-emitter voltage. Its Vce saturation is a maximum of 5V at 6.7A base current and 20A collector current.
With an operating temperature range of -65°C to 200°C (TJ), the MJ13333 is suitable for demanding environments. Its RoHS3 compliance indicates adherence to certain environmental standards, though specific verification details are not provided.
This transistor is appropriate for power switching, amplification, and other high-power applications where robust performance and reliability are essential.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MJ13333 transistor has a maximum collector-emitter voltage rating of 400V.
The MJ13333 can handle a continuous collector current of 20A.
The MJ13333 transistor has a power dissipation rating of 275W.
The MJ13333 transistor operates within a temperature range of -65°C to 200°C (TJ).
The MJ13333 is supplied in a TO-3 (TO-204AA) package.
The MJ13333 transistor is designed for through-hole mounting.