| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,200 pcs
|
3200 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Junction Temperature | |
| Mounting Type | |
| Power | |
| Supplier Device Package | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJ11033 from NTE Electronics is a PNP Darlington power transistor designed for use as output devices in complementary general purpose amplifier applications. This transistor boasts a high DC current gain, with a minimum hFE of 1000 at 25A and 5V. It can handle a continuous collector current of up to 50A and a peak current of 100A.
The MJ11033 features a Collector-Emitter Breakdown Voltage of -120V and a Collector-Emitter Voltage of -120V. Its maximum power dissipation is rated at 300W at 25℃ case temperature. The transistor is housed in a TO-204AE package, also known as TO-204 (TO-3), and is designed for through-hole mounting.
Key electrical characteristics include a Collector-Emitter Saturation Voltage of 2.5V maximum at 250mA base current and 25A collector current. The junction temperature can reach up to 200℃, with storage temperatures ranging from -55℃ to +200℃. The thermal resistance from junction to case is 0.584℃/W.
This component is suitable for applications requiring high power amplification and complementary output stages. Its specifications make it a reliable choice for demanding amplifier designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-120V
-50A
300W
TO-204AE
Through Hole
1000
-2.5V