MJ11032G The MJ11032G is an NPN Darlington power transistor from ON Semiconductor. It features a 120V collector-emitter voltage and 50A continuous collector current, housed in a TO-204 package.
Mfr Part #:

MJ11032G

Available from 5 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJ11032G is an NPN Darlington power transistor from ON Semiconductor. It features a 120V collector-emitter voltage and 50A continuous collector current, housed in a TO-204 package.
✓ Total Stock: 13,960 pcs
$ Price Range: $0.99

MJ11032G Available from 5 distributors

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MJ11032G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Mounting Type
Operating Temperature
Power
Supplier Device Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJ11032G Description

Short technical summary and product information.

The MJ11032G is a high-current NPN Darlington power transistor manufactured by ON Semiconductor. Designed for complementary general-purpose amplifier applications, this transistor offers robust performance with a maximum collector-emitter voltage of 120V and a continuous collector current rating of 50A.

 

Key electrical characteristics include a high DC current gain (hFE) of 1000 minimum at 25A and 5V, and a Vce saturation of 3.5V maximum at 500mA base current and 50A collector current. The device can handle a total power dissipation of 300W at 25°C case temperature.

 

This transistor operates within a wide temperature range of -55°C to 200°C (TJ). It is supplied in a TO-204AE package, also known as TO-3, which is suitable for through-hole mounting. The monolithic construction includes a built-in base-emitter shunt resistor for enhanced reliability.

 

Pb-free packages are available for this component, aligning with modern environmental standards. Its specifications make it suitable for various power amplification and switching applications where high current and voltage handling are required.

MJ11032G Quick Information

Product Type: Power Transistor
Canonical Name: MJ11032G NPN Darlington Power Transistor
Subcategory: Power Transistor

MJ11032G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Pb-Free

MJ11032G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJ11032G Features

  • NPN Darlington power transistor.
  • 120V collector-emitter voltage rating.
  • 50A continuous collector current.
  • 300W total power dissipation.
  • TO-204 (TO-3) package for through-hole mounting.

MJ11032G Applications

  • General purpose amplifier output devices.
  • Complementary power applications.
  • High current switching circuits.
  • Power supply regulation circuits.

MJ11032G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJ11032G?

The maximum collector-emitter voltage for the MJ11032G is 120 Vdc.

What is the continuous collector current rating of the MJ11032G?

The MJ11032G has a continuous collector current rating of 50 Adc.

What is the operating temperature range for the MJ11032G?

The operating and storage junction temperature range for the MJ11032G is -55°C to +200°C.

What package type is the MJ11032G supplied in?

The MJ11032G is supplied in a TO-204AE package, also referred to as TO-204 (TO-3).

What is the RoHS status of the MJ11032G?

The RoHS status of the MJ11032G is RoHS3 Compliant.

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