| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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10 pcs
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10 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The ON Semiconductor MJ11032 is a high-current complementary silicon power transistor designed for use as output devices in complementary general purpose amplifier applications. This NPN transistor features a high DC current gain, with a minimum hFE of 1000 at 25 Adc and 400 at 50 Adc. It can handle a continuous collector current of up to 50 Adc and a peak current of 100 Adc.
With a maximum collector-emitter voltage (VCEO) of 120 Vdc for the MJ11032/33 variants, this device is suitable for demanding applications. It offers a total power dissipation of 300W at 25°C case temperature, with a derating of 1.71 W/°C above 25°C. The operating and storage junction temperature range is from -55°C to +200°C.
The MJ11032 is housed in a TO-204 (TO-3) package, suitable for through-hole mounting. It includes built-in base-emitter shunt resistors for enhanced reliability and diode protection to rated IC. Pb-Free packages are available.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJ11032/33 variants is 120 Vdc.
The MJ11032 has a continuous collector current (IC) rating of 50 Adc.
The total power dissipation (PD) for the MJ11032 at a case temperature of 25°C is 300 W.
The operating and storage junction temperature range (TJ, Tstg) is -55°C to +200°C.
The MJ11032 is supplied in a TO-204 (TO-3) package.
Yes, Pb-Free packages are available for the MJ11032.