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320 pcs
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320 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJ11032 from ON Semiconductor is a high-current complementary silicon power transistor. It is designed for use as an output device in complementary general-purpose amplifier applications.
This NPN Darlington transistor features a maximum collector-emitter voltage of 120V and a continuous collector current rating of 50A. It can handle a total power dissipation of 300W at 25°C case temperature. The device exhibits a high DC current gain (hFE) of 1000 minimum at 25A and 5V.
Packaged in a TO-204AE (TO-3) case, the MJ11032 is suitable for through-hole mounting. It operates over a wide temperature range from -55°C to +200°C (TJ), making it robust for demanding applications. The transistor includes built-in base-emitter shunt resistors for enhanced reliability.
Key electrical characteristics include a Vce saturation of 3.5V maximum at 500mA base current and 50A collector current. The datasheet also specifies an emitter-base voltage of 5.0Vdc and a peak collector current of 100A. Thermal characteristics include a junction-to-case thermal resistance of 0.58°C/W.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJ11032 is 120 Vdc.
The MJ11032 has a continuous collector current rating of 50 A.
The total power dissipation for the MJ11032 at a case temperature of 25°C is 300 W.
The DC current gain (hFE) of the MJ11032 is a minimum of 1000 at an IC of 25A.
The operating junction temperature range for the MJ11032 is -55°C to +200°C.
The MJ11032 is supplied in a TO-204AE (TO-3) package.