| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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2,500 pcs
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2500 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The NTE Electronics MJ11032 is a high-current complementary silicon power transistor designed for use as output devices in complementary general purpose amplifier applications. This NPN Darlington transistor features a maximum collector-emitter voltage of 120V and can handle a continuous collector current of 50A, with a peak current capability of 100A.
With a total power dissipation of 300W at 25°C, the MJ11032 is suitable for demanding power applications. It boasts a high DC current gain (hFE) of 1000 minimum at 25A and 400 minimum at 50A. The transistor operates over a wide temperature range from -55°C to 200°C (TJ).
Packaged in a TO-204 (TO-3) case, the MJ11032 is designed for through-hole mounting. It includes built-in base-emitter shunt resistors for enhanced reliability and diode protection to its rated collector current. The device is available in Pb-free packages.
This transistor is ideal for power amplification stages in various electronic circuits requiring high current and voltage handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJ11032 is 120 Vdc.
The MJ11032 has a continuous collector current rating of 50 A.
The total power dissipation for the MJ11032 at 25°C is 300 W.
The operating temperature range for the MJ11032 is -55°C to 200°C (TJ).
The MJ11032 is supplied in a TO-204 (TO-3) package.
The MJ11032 is designed for through-hole mounting.
The DC current gain (hFE) of the MJ11032 is a minimum of 1000 at 25A.