MJ11032 The NTE Electronics MJ11032 is an NPN Darlington power transistor designed for general purpose amplifier applications. It offers high current gain and robust power handling capabilities.
Mfr Part #:

MJ11032

Available from 1 distributors
Mfr Name: NTE Electronics
NTE Electronics
The NTE Electronics MJ11032 is an NPN Darlington power transistor designed for general purpose amplifier applications. It offers high current gain and robust power handling capabilities.
Total Stock: 2,500 pcs
$ Price Range: $0.99

MJ11032 Available from 1 distributor

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2,500 pcs
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MJ11032 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Junction Temperature
Mounting Type
Operating Temperature
Package / Case
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJ11032 Description

Short technical summary and product information.

The NTE Electronics MJ11032 is a high-current complementary silicon power transistor designed for use as output devices in complementary general purpose amplifier applications. This NPN Darlington transistor features a maximum collector-emitter voltage of 120V and can handle a continuous collector current of 50A, with a peak current capability of 100A.

 

With a total power dissipation of 300W at 25°C, the MJ11032 is suitable for demanding power applications. It boasts a high DC current gain (hFE) of 1000 minimum at 25A and 400 minimum at 50A. The transistor operates over a wide temperature range from -55°C to 200°C (TJ).

 

Packaged in a TO-204 (TO-3) case, the MJ11032 is designed for through-hole mounting. It includes built-in base-emitter shunt resistors for enhanced reliability and diode protection to its rated collector current. The device is available in Pb-free packages.

 

This transistor is ideal for power amplification stages in various electronic circuits requiring high current and voltage handling capabilities.

MJ11032 Quick Information

Product Type: Bipolar Transistor
Canonical Name: MJ11032 NPN Darlington Power Transistor
Subcategory: NPN Darlington

MJ11032 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJ11032 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJ11032 Features

  • NPN Darlington power transistor.
  • 120V collector-emitter voltage rating.
  • 50A continuous collector current.
  • 300W total power dissipation.
  • TO-204 (TO-3) package for through-hole mounting.

MJ11032 Applications

  • Suitable for general purpose amplifiers.
  • Used in complementary output stages.
  • Ideal for high-current applications.
  • Power supply regulation circuits.

MJ11032 FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJ11032?

The maximum collector-emitter voltage (VCEO) for the MJ11032 is 120 Vdc.

What is the continuous collector current rating of the MJ11032?

The MJ11032 has a continuous collector current rating of 50 A.

What is the power dissipation of the MJ11032 transistor?

The total power dissipation for the MJ11032 at 25°C is 300 W.

What is the operating temperature range for the MJ11032?

The operating temperature range for the MJ11032 is -55°C to 200°C (TJ).

What package type is the MJ11032 supplied in?

The MJ11032 is supplied in a TO-204 (TO-3) package.

How is the MJ11032 mounted?

The MJ11032 is designed for through-hole mounting.

What is the DC current gain (hFE) of the MJ11032 at 25A?

The DC current gain (hFE) of the MJ11032 is a minimum of 1000 at 25A.

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