MJ11016G The ON Semiconductor MJ11016G is an NPN Darlington power transistor designed for general purpose amplifier applications. It features a 120V collector-emitter voltage and 30A collector current.
Mfr Part #:

MJ11016G

Available from 4 distributors
Mfr Name: On Semiconductor
On Semiconductor
The ON Semiconductor MJ11016G is an NPN Darlington power transistor designed for general purpose amplifier applications. It features a 120V collector-emitter voltage and 30A collector current.
Total Stock: 4,385 pcs
$ Price Range: $0.99

MJ11016G Available from 4 distributors

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MJ11016G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Collector-Emitter Breakdown Voltage
Current
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
High DC Current Gain
Maximum Lead Temperature for Soldering Purposes
Mounting Type
Operating & Storage Junction Temperature Range
Operating Temperature
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJ11016G Description

Short technical summary and product information.

The MJ11016G from ON Semiconductor is a high-current NPN Darlington power transistor. It is designed for use as output devices in complementary general-purpose amplifier applications.

 

This transistor offers a high DC current gain (hFE) of 1000 minimum at 20 Adc. It can handle a collector current of up to 30 Adc and has a collector-emitter voltage rating of 120 Vdc. The device is rated for a total power dissipation of 200W at 25°C case temperature.

 

Featuring monolithic construction with a built-in base-emitter shunt resistor, the MJ11016G operates over a wide temperature range from -55°C to +200°C. It is housed in a TO-204AA (TO-3) package, suitable for through-hole mounting.

 

The MJ11016G is a preferred device, recommended for future use and offering the best overall value. Its complementary PNP counterpart is the MJ11015.

MJ11016G Quick Information

Product Type: NPN Darlington Transistor
Canonical Name: MJ11016G NPN Darlington Power Transistor
Subcategory: NPN Darlington

MJ11016G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJ11016G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJ11016G Features

  • High DC Current Gain: 1000 (Min) @ 20A
  • 120V Collector-Emitter Voltage Rating
  • 30A Continuous Collector Current
  • 200W Total Power Dissipation
  • Wide Operating Temperature Range: -55°C to 200°C

MJ11016G Applications

  • Suitable for high-current switching applications.
  • Used in power amplifier output stages.
  • Ideal for motor control and regulation circuits.
  • Applicable in high-voltage switching environments.
  • Suitable for complementary transistor configurations.

MJ11016G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJ11016G?

The maximum collector-emitter voltage (VCEO) for the MJ11016G is 120 Vdc.

What is the continuous collector current rating of the MJ11016G?

The MJ11016G can handle a continuous collector current (IC) of up to 30 Adc.

What is the power dissipation of the MJ11016G transistor?

The total device power dissipation (PD) for the MJ11016G is 200W at a case temperature of 25°C.

What is the operating temperature range for the MJ11016G?

The operating and storage junction temperature range for the MJ11016G is -55°C to +200°C.

What is the package type for the MJ11016G?

The MJ11016G is supplied in a TO-204AA (TO-3) package.

What is the DC current gain (hFE) of the MJ11016G?

The MJ11016G has a minimum DC current gain (hFE) of 1000 at an IC of 20 Adc.

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