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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,161 pcs
|
3161 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1,220 pcs
|
1220 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| High DC Current Gain | |
| Maximum Lead Temperature for Soldering Purposes | |
| Mounting Type | |
| Operating & Storage Junction Temperature Range | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Thermal Resistance - Junction to Case | |
| Total Device Dissipation | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJ11016G from ON Semiconductor is a high-current NPN Darlington power transistor. It is designed for use as output devices in complementary general-purpose amplifier applications.
This transistor offers a high DC current gain (hFE) of 1000 minimum at 20 Adc. It can handle a collector current of up to 30 Adc and has a collector-emitter voltage rating of 120 Vdc. The device is rated for a total power dissipation of 200W at 25°C case temperature.
Featuring monolithic construction with a built-in base-emitter shunt resistor, the MJ11016G operates over a wide temperature range from -55°C to +200°C. It is housed in a TO-204AA (TO-3) package, suitable for through-hole mounting.
The MJ11016G is a preferred device, recommended for future use and offering the best overall value. Its complementary PNP counterpart is the MJ11015.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJ11016G is 120 Vdc.
The MJ11016G can handle a continuous collector current (IC) of up to 30 Adc.
The total device power dissipation (PD) for the MJ11016G is 200W at a case temperature of 25°C.
The operating and storage junction temperature range for the MJ11016G is -55°C to +200°C.
The MJ11016G is supplied in a TO-204AA (TO-3) package.
The MJ11016G has a minimum DC current gain (hFE) of 1000 at an IC of 20 Adc.