| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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377 pcs
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377 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Tape & Reel |
The MJ11016 is a high-current NPN Darlington power transistor manufactured by ON Semiconductor. It is designed for use as an output device in complementary general-purpose amplifier applications.
Key electrical specifications include a maximum collector-emitter voltage (VCEO) of 120V for the MJ11015/6 variants and 60V for the MJ11012. It can handle a continuous collector current (IC) of up to 30 Adc and a base current (IB) of 1 Adc. The device boasts a high DC current gain (hFE) of 1000 minimum at 20 Adc. Total device dissipation (PD) is rated at 200W at 25°C case temperature, with a derating of 1.15W/°C above 25°C.
Thermal characteristics include a junction-to-case thermal resistance (RθJC) of 0.87°C/W. The operating and storage junction temperature range is from -55°C to +200°C. The maximum lead temperature for soldering purposes is 275°C for up to 10 seconds.
This transistor is housed in a TO-204AA (TO-3) package, suitable for through-hole mounting. It is available in Pb-Free versions, indicating compliance with environmental regulations.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.77 | $0.77 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEO) for the MJ11015/6 variants is 120 Vdc, and for the MJ11012 it is 60 Vdc.
The maximum continuous collector current (IC) for the MJ11016 is 30 Adc.
The total device power dissipation (PD) for the MJ11016 at a case temperature of 25°C is 200W.
The operating and storage junction temperature range for the MJ11016 is -55°C to +200°C.
The MJ11016 is supplied in a TO-204AA (TO-3) package.
The MJ11016 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MJ11016 is 1 Unlimited.