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| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Base Current | |
| Collector-Emitter Breakdown Voltage | |
| Current | |
| DC Current Gain (hFE) (Min) @ Ic, Vce | |
| Frequency | |
| Junction Temperature | |
| Mounting Type | |
| Operating Temperature | |
| Power | |
| Supplier Device Package | |
| Tape & Reel | |
| Thermal Resistance - Junction to Case | |
| Transistor Type | |
| Vce Saturation (Max) @ Ib, Ic | |
| Voltage |
The MJ11016 is a bipolar junction transistor (BJT) in a Darlington configuration manufactured by On Semiconductor. It features a collector-emitter voltage maximum of 120V and a collector current maximum of 30A. The device is designed for high-power switching and amplification applications. It is packaged in a TO-204AA (TO-3) through-hole package, suitable for through-hole mounting on printed circuit boards. The transistor has a maximum total device dissipation of 200W and operates over a temperature range from -55°C to +200°C. Its junction-to-case thermal resistance is 0.87°C/W, ensuring efficient heat dissipation. The device's high DC current gain (minimum 1000 at 20A) makes it suitable for applications requiring high current amplification.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
120 Vdc
TO-204AA, TO-3
-55°C to +200°C
RoHS3 Compliant