MJ11015G The MJ11015G is a PNP Darlington power transistor from ON Semiconductor. It features a 120V collector-emitter voltage and a 30A current rating.
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MJ11015G

Available from 2 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJ11015G is a PNP Darlington power transistor from ON Semiconductor. It features a 120V collector-emitter voltage and a 30A current rating.
Total Stock: 4,100 pcs
$ Price Range: $0.99

MJ11015G Available from 2 distributors

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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4,000 pcs
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100 pcs
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MJ11015G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
DC Current Gain (hFE)
DC Current Gain (hFE) (Min) @ Ic, Vce
Frequency
Junction Temperature
Mounting Type
Operating Temperature
Power
Supplier Device Package
Thermal Resistance - Junction to Case
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJ11015G Description

Short technical summary and product information.

The MJ11015G is a high-current PNP Darlington silicon transistor manufactured by ON Semiconductor. Designed for complementary general-purpose amplifier applications, it offers robust performance with a high DC current gain of 1000 minimum at 20 Adc.

 

This transistor has a maximum collector-emitter voltage (VCEO) of 120V and can handle a continuous collector current (IC) of up to 30A. Its total device dissipation (PD) is rated at 200W at a case temperature of 25°C. The operating temperature range is from -55°C to 200°C, making it suitable for demanding environments.

 

The MJ11015G is housed in a TO-204AA (TO-3) package, designed for through-hole mounting. This package type is known for its thermal performance, facilitating efficient heat dissipation in high-power applications. The transistor also features monolithic construction with a built-in base-emitter shunt resistor for enhanced reliability.

MJ11015G Quick Information

Product Type: Power Transistor
Canonical Name: MJ11015G PNP Darlington Power Transistor
Subcategory: PNP Darlington

MJ11015G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJ11015G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJ11015G Features

  • High DC current gain of 1000 minimum.
  • 120V collector-emitter voltage rating.
  • 30A continuous collector current.
  • 200W total power dissipation.
  • TO-204AA (TO-3) package for high power.

MJ11015G Applications

  • Suitable for high-voltage power switching
  • Used in high-current amplifier circuits
  • Ideal for motor control applications
  • Applicable in power supply regulation

MJ11015G FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJ11015G?

The maximum collector-emitter voltage (VCEO) for the MJ11015G is 120 Vdc.

What is the continuous collector current rating of the MJ11015G?

The MJ11015G has a continuous collector current (IC) rating of 30 Adc.

What is the power dissipation of the MJ11015G transistor?

The total device dissipation (PD) for the MJ11015G is 200 W at a case temperature of 25°C.

What is the operating temperature range for the MJ11015G?

The operating temperature range for the MJ11015G is -55°C to 200°C.

What is the DC current gain (hFE) of the MJ11015G?

The MJ11015G has a minimum DC current gain (hFE) of 1000 at an IC of 20 Adc.

What package type is the MJ11015G supplied in?

The MJ11015G is supplied in a TO-204AA, also known as TO-3, package.

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