BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The MJ11015 from ST is a PNP Darlington power transistor designed for use as output devices in complementary general-purpose amplifier applications. It features a Collector-Emitter Breakdown Voltage (VCEO) of -120V and a continuous Collector Current (IC) of -30A.
This transistor boasts a high DC Current Gain (hFE) of 1000 minimum at IC=-20A and VCE=-5V. The Collector Power Dissipation (PC) is rated at 200W at a case temperature of 25°C. The junction temperature can reach up to 200°C, with a storage temperature range of -55°C to +200°C.
The MJ11015 is housed in a TO-3 package, suitable for through-hole mounting. Its thermal resistance from junction to case (Rthj-c) is 0.87°C/W, indicating efficient heat dissipation capabilities.
Key electrical characteristics include low collector saturation voltages, such as VCE(sat) of -3.0V maximum at IC=-20A and IB=-0.2A. The complementary NPN transistor for this device is the MJ11016.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.11 | $0.11 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-120V
-30A
200W
200°C
0.87°C/W
TO-3
1000