| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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4,000 pcs
|
4000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| DC Current Gain (hFE) (Min) @ Ic, Vce | |
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The MJ11015 is a PNP Darlington power transistor from Solid State Devices Inc (SSDI). It is designed for use as output devices in complementary general-purpose amplifier applications. This transistor offers a high DC current gain of 1000 (min) at 20A and a collector-emitter breakdown voltage of -120V (min).
Key electrical specifications include a continuous collector current of 30A and a continuous base current of 1A. The collector power dissipation is rated at 200W at 25°C case temperature. Saturation voltages are specified, with VCE(sat) being a maximum of -3.0V at IC=-20A and IB=-0.2A, and -4.0V at IC=-30A and IB=-0.3A.
This device operates within a junction temperature range of -55°C to +200°C and has a storage temperature range of -55°C to +200°C. The thermal resistance from junction to case is 0.87°C/W. The MJ11015 is supplied in a TO-204AA, TO-3 package and is designed for through-hole mounting.
Complementary to the NPN MJ11016, this transistor is suitable for various amplifier designs requiring high current and voltage handling capabilities.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
-120V
-30A
200W
TO-204AA, TO-3
-65°C ~ 200°C
1000
-3.0V