MJ11013 The MJ11013 is a PNP Darlington power transistor from Solid State Devices Inc (SSDI). It offers a 90V collector-emitter voltage and 30A collector current, housed in a TO-3 package.
Mfr Part #:

MJ11013

Available from 1 distributors
Mfr Name: Solid State Devices Inc (SSDI)
Solid State Devices Inc (SSDI)
The MJ11013 is a PNP Darlington power transistor from Solid State Devices Inc (SSDI). It offers a 90V collector-emitter voltage and 30A collector current, housed in a TO-3 package.
Total Stock: 3,600 pcs
$ Price Range: $0.99

MJ11013 Available from 1 distributor

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MJ11013 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base - Emitter Saturation Voltage
Collector Emitter Leakage Current (Maximum @ VCE = 50 Vdc, IB = 0)
Collector Emitter Leakage Current (Maximum @ Vce = 90 Vdc, Rbe = 1 k ohm)
Collector Emitter Leakage Current (Maximum @ Vce = 90 Vdc, Rbe = 1 k ohm, Tc = 150 °C)
Collector Emitter Saturation Voltage (Maximum @ IC = 30 Adc, Ib = 300 mAdc)
Collector-Emitter Breakdown Voltage
Current
Current-Gain - Bandwidth Product
DC Current Gain (Minimum @ IC = 30 Adc, VCE = 5 Vdc)
DC Current Gain (hFE) (Min) @ Ic, Vce
Emitter Cutoff Current
Mounting Type
Operating Temperature
Power
Supplier Device Package
Supplier Package
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJ11013 Description

Short technical summary and product information.

The MJ11013 is a PNP Darlington transistor designed for high-current applications. It features a maximum collector-emitter voltage of 90V and a continuous collector current rating of 30A. With a total device power dissipation of 200W at 25°C, this transistor is suitable for demanding amplifier applications.

 

The MJ11013 utilizes a Darlington configuration for high DC current gain, rated at a minimum of 1000 at 20A and 5V. The saturation voltage (Vce(sat)) is a maximum of 4V at 300mA and 30A, and the base-emitter saturation voltage (Vbe(sat)) is a maximum of 5V under the same conditions. The operating temperature range extends from -65°C to 200°C.

 

This component is packaged in a TO-3 (TO-204AA) case and features a through-hole mounting type. Its robust construction and electrical characteristics make it a reliable choice for power output stages in complementary amplifier designs.

MJ11013 Quick Information

Product Type: PNP Darlington Transistor
Canonical Name: MJ11013 PNP Darlington Power Transistor
Subcategory: PNP Darlington

MJ11013 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJ11013 Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJ11013 Features

  • PNP Darlington transistor for high current.
  • 90V collector-emitter voltage rating.
  • 30A continuous collector current.
  • 200W maximum power dissipation.
  • Wide operating temperature range.

MJ11013 Applications

  • Used in complementary amplifier applications.
  • Suitable for high-power output stages.
  • Designed for general purpose amplification.
  • Robust for demanding circuit designs.

MJ11013 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJ11013?

The maximum collector-emitter voltage for the MJ11013 is 90 Vdc.

What is the continuous collector current rating of the MJ11013?

The MJ11013 has a continuous collector current rating of 30 A.

What is the maximum power dissipation for the MJ11013 transistor?

The maximum power dissipation for the MJ11013 is 200 W at a case temperature of 25°C.

What is the DC current gain (hFE) of the MJ11013?

The MJ11013 has a minimum DC current gain (hFE) of 1000 at 20A collector current and 5V collector-emitter voltage.

What is the operating temperature range for the MJ11013?

The operating temperature range for the MJ11013 is -65°C to 200°C (TJ).

What package type is the MJ11013 supplied in?

The MJ11013 is supplied in a TO-3 (TO-204AA) package.

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