MJ11012G The MJ11012G is an NPN Darlington power transistor from ON Semiconductor. It offers a 60V collector-emitter voltage and 30A collector current, housed in a TO-3 package.
Mfr Part #:

MJ11012G

Available from 1 distributors
Mfr Name: On Semiconductor
On Semiconductor
The MJ11012G is an NPN Darlington power transistor from ON Semiconductor. It offers a 60V collector-emitter voltage and 30A collector current, housed in a TO-3 package.
Total Stock: 1,300 pcs
$ Price Range: $0.99

MJ11012G Available from 1 distributor

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Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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1,300 pcs
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MJ11012G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Base Current
Collector Current
Collector-Emitter Breakdown Voltage
Collector-Emitter Voltage
Current
DC Current Gain (Minimum @ IC = 20 Adc)
DC Current Gain (hFE) (Min) @ Ic, Vce
Derate above 25°C
Frequency
Maximum Lead Temperature for Soldering Purposes
Mounting Type
Operating & Storage Junction Temperature Range
Operating Temperature
Power
Reverse Voltage (Maximum)
Supplier Device Package
Thermal Resistance - Junction to Case
Total Device Dissipation
Transistor Type
Vce Saturation (Max) @ Ib, Ic
Voltage

MJ11012G Description

Short technical summary and product information.

The MJ11012G is a high-current NPN Darlington power transistor manufactured by ON Semiconductor. Designed for complementary general-purpose amplifier applications, this transistor features a monolithic construction with a built-in base-emitter shunt resistor.

 

Key electrical specifications include a maximum collector-emitter voltage of 60V and a continuous collector current of 30A. It boasts a high DC current gain (hFE) of 1000 minimum at 20A and 5V. The device can handle a total power dissipation of 200W at 25°C, with derating above that temperature. The operating temperature range is from -55°C to 200°C.

 

This transistor is supplied in a TO-204AA (TO-3) package, suitable for through-hole mounting. The thermal resistance from junction to case is 0.87°C/W. The MJ11012G is designed for robust performance in demanding amplifier circuits.

MJ11012G Quick Information

Product Type: Transistor
Canonical Name: MJ11012G NPN Darlington Power Transistor
Subcategory: Single

MJ11012G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MJ11012G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MJ11012G Features

  • High DC current gain of 1000 minimum.
  • 60V collector-emitter voltage rating.
  • 30A continuous collector current.
  • 200W total power dissipation.
  • TO-3 package for through-hole mounting.

MJ11012G Applications

  • Used in general purpose amplifier output stages.
  • Suitable for complementary amplifier designs.
  • Power supply regulation circuits.
  • High current switching applications.

MJ11012G FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector-emitter voltage for the MJ11012G?

The maximum collector-emitter voltage for the MJ11012G is 60 Vdc.

What is the continuous collector current rating of the MJ11012G?

The MJ11012G has a continuous collector current rating of 30 Adc.

What is the power dissipation of the MJ11012G at 25°C?

The total device power dissipation for the MJ11012G at 25°C is 200 W.

What is the operating temperature range for the MJ11012G transistor?

The operating temperature range for the MJ11012G is -55°C to 200°C.

What package type is the MJ11012G supplied in?

The MJ11012G is supplied in a TO-204AA, TO-3 package.

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