| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2,005 pcs
|
2005 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request | |
|
100 pcs
|
100 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
|
1 pcs
|
1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name |
The MJ10016 is an NPN Darlington transistor manufactured by Motorola Semiconductor. This component is designed for high-power applications, featuring a maximum collector-emitter breakdown voltage of 400V and capable of handling a continuous collector current of up to 50A.
Key electrical characteristics include a low Vce saturation voltage of 5V at 10A/50A and a minimum DC current gain (hFE) of 25 at 20A/5V. The transistor has a maximum power dissipation of 250W and an operating temperature range from -65°C to 200°C.
Packaged in a TO-3 (TO-204AA) case, the MJ10016 is designed for through-hole mounting. It is RoHS3 compliant, indicating adherence to environmental standards for hazardous substances.
This transistor is suitable for various power switching and amplification applications where high voltage and current handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.54 | $2.54 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter breakdown voltage is 400V.
The Vce saturation voltage is 5V at 10A and 50A.
The MJ10016 is an NPN Darlington transistor.
The maximum power dissipation is 250W.
The operating temperature range is -65°C to 200°C.
The minimum DC current gain (hFE) is 25 at 20A and 5V.
The maximum collector cutoff current is 250µA.