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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJ10015 is an NPN Silicon Power Darlington Transistor manufactured by Motorola Semiconductor. It is designed for high-reliability applications and offers significant power handling capabilities.
Key electrical specifications include a continuous collector current of up to 50A and a peak collector current of 75A. The collector-emitter voltage (VCEV) can reach up to 700V, with a sustaining voltage (VCEO(sus)) of up to 500V. The device boasts a high DC current gain (hFE) and a low collector-emitter saturation voltage (VCE(sat)).
Packaged in a TO-3 case, the MJ10015 is suitable for through-hole mounting. Its operating and storage junction temperature range is from -65°C to +200°C, with a low thermal resistance from junction to case of 0.7°C/W. This makes it suitable for demanding thermal environments.
This transistor is available in various configurations, including high-reliability screened versions and RoHS-compliant options with '-PBF' suffix. It is also available in non-RoHS (Sn/Pb plating) standard versions.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEV) for the MJ10015 is 600V.
The continuous collector current (IC) for the MJ10015 is 50A.
The MJ10015 transistor comes in a TO-3 package.
The operating and storage junction temperature range for the MJ10015 is -65°C to +200°C.
The thermal resistance from junction to case (RθJC) for the MJ10015 is 0.7°C/W.
Yes, the MJ10015 is available as RoHS compliant by adding the '-PBF' suffix.