| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
3,600 pcs
|
3600 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJ10015 is an NPN Silicon Power Darlington Transistor manufactured by NTE Electronics. It is designed for high-power applications, featuring a continuous collector current of 50A and a peak collector current of 75A. The transistor offers a collector-emitter sustaining voltage (VCEO(sus)) of up to 500V and a maximum collector-emitter voltage (VCEV) of 700V.
With a total power dissipation of 250W at 25°C case temperature, the MJ10015 is suitable for demanding thermal environments. Its operating and storage junction temperature range is from -65°C to +200°C. The DC current gain (hFE) is a minimum of 25 at 20A and 5V.
This component is housed in a TO-3 (TO-204AA) package, designed for through-hole mounting. The MJ10015 is available in standard and RoHS compliant versions. It is also available as high-reliability screened per MIL-PRF-19500, JANTX level by adding an "HR" suffix to the base part number.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector-emitter voltage (VCEV) is 700V and the collector-emitter sustaining voltage (VCEO(sus)) is up to 500V.
The continuous collector current (IC) for the MJ10015 is 50A.
The total power dissipation (PD) for the MJ10015 at 25°C is 250W.
The operating and storage junction temperature range (TJ, Tstg) is -65°C to +200°C.
The MJ10015 is supplied in a TO-3 (TO-204AA) package.