| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
5,000 pcs
|
5000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJ10012 is a high-voltage, high-current NPN Power Darlington Transistor manufactured by NTE Electronics. It is designed for demanding applications such as automotive ignition systems, switching regulators, and motor control.
Key electrical specifications include a Collector-Emitter Sustaining Voltage (VCEO(sus)) of 400 Vdc (Min), a continuous collector current of 10 A, and a power dissipation capability of 175 W. The transistor offers a DC Current Gain (hFE) of 300 at 3A and 6V, with a Vce Saturation of 2.5V at 2A and 10A.
This transistor is housed in a TO-3 package, suitable for through-hole mounting. It operates within a temperature range of -65°C to 200°C (TJ). The MJ10012 is RoHS3 compliant, has an MSL of 1, and is REACH unaffected.
Equivalent or alternate parts include MJ10000, MJ10001, MJ10002, MJ10003, and MJ10004.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The Collector-Emitter Sustaining Voltage (VCEO(sus)) for the MJ10012 is a minimum of 400 Vdc.
The MJ10012 transistor can handle a continuous collector current of 10 A.
The MJ10012 has a power dissipation rating of 175 W.
The DC Current Gain (hFE) of the MJ10012 is a minimum of 300 at 3A and 6V.
The MJ10012 operates within a temperature range of -65°C to 200°C (TJ).
The MJ10012 is supplied in a TO-204AA, TO-3 package.
The MJ10012 is mounted using the through-hole method.