| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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7 pcs
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7 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MJ10000 is an NPN Silicon Power Darlington Transistor manufactured by Motorola Semiconductor. It is specifically designed for high-voltage, high-speed power switching in inductive circuits where fall time is critical.
Key electrical specifications include a collector-emitter breakdown voltage of 350V, a continuous collector current of 20A, and a power dissipation of 175W. These characteristics make it suitable for demanding applications.
This transistor is particularly well-suited for line-operated switchmode applications. Its design is optimized for use in switching regulators, inverters, solenoid and relay drivers, motor controls, and deflection circuits. The Darlington configuration provides high current gain and low saturation voltage.
The MJ10000 is designed for through-hole mounting, facilitating integration into various electronic assemblies. Its robust construction and electrical characteristics ensure reliable performance in power switching scenarios.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.45 | $0.45 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter breakdown voltage for the MJ10000 is 350V.
The MJ10000 has a continuous collector current rating of 20A.
The power dissipation for the MJ10000 is 175W.
The MJ10000 is an NPN Silicon Power Darlington Transistor.
The MJ10000 is suited for switching regulators, inverters, solenoid and relay drivers, motor controls, and deflection circuits.