| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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6 pcs
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6 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The Toshiba MIG15Q906H is an N-Channel Insulated Gate Bipolar Transistor (IGBT) module manufactured by Toshiba. This component is suitable for high-power switching applications.
Key electrical specifications include a maximum collector current of 25A and a collector-emitter voltage rating of 1.2kV. The device operates at a maximum temperature of 150°C.
This IGBT module is identified by part number MIG15Q906H and is part of Toshiba's range of IGBT products. It is listed with 24 terminals.
The MIG15Q906H is RoHS3 compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for general industrial applications where environmental conditions are controlled.
| Qty | Low | High |
|---|---|---|
| 1+ | $103.07 | $103.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the MIG15Q906H is 25A.
The collector-emitter voltage of the MIG15Q906H is 1.2kV.
The maximum operating temperature for the MIG15Q906H is 150°C.
The MIG15Q906H is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MIG15Q906H is 1 Unlimited.