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1,000 pcs
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1000 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The On Semiconductor MICROFJ-60035-TSV-TR is a J-Series Silicon Photomultiplier (SiPM) sensor designed for high performance in low-light applications. It utilizes a P-on-N silicon foundry process to achieve a high photon detection efficiency (PDE).
Key electrical specifications include a typical breakdown voltage of 24.7 V and an operating voltage up to 30.7 V. The sensor has a spectral range of 200 nm to 900 nm with a peak PDE wavelength at 420 nm. Performance metrics for the 60035 variant include a typical PDE of 50% at +6V overvoltage, a typical gain of 6.3 x 10^6, and a fast output rise time of 250 ps.
This SiPM is housed in a 36-WBGA package suitable for surface mounting. The TSV (Through Silicon Via) process minimizes dead space and ensures compatibility with industry-standard reflow soldering processes. The J-Series sensors combine the advantages of solid-state technology, such as low operating voltage, excellent temperature stability, robustness, and compactness.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.50 | $1.50 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The typical breakdown voltage is 24.7 V.
The spectral range is from 200 nm to 900 nm.
The peak PDE wavelength is 420 nm.
It is supplied in a 36-WBGA package.
This component is designed for surface mounting.
The typical dark current is 7.5 nA.
The typical rise time is 250 ps.