| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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32,644 pcs
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32644 pcs | On Request | 1 | On Request | On Request | 2020+ | On Request | On Request |
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The MIC4123YME-TR from Microchip Technology is a dual, low-side gate driver designed for driving N-channel and P-channel MOSFETs. It operates within a voltage range of 4.5V to 20V and can source/sink up to 3A of current per driver. The device features inverting input logic and independent channels, making it suitable for various power management applications.
This gate driver is housed in an 8-SOIC package with an exposed pad for enhanced thermal performance. It is designed for surface mount applications and operates across a wide temperature range of -40°C to 125°C (TJ). The driver offers fast switching characteristics with rise and fall times of 11ns.
Key electrical specifications include a logic voltage range of 0.8V to 2.4V, enabling compatibility with different control signal levels. The low-side configuration is ideal for applications where the MOSFET source is connected to ground. Its robust design and specifications make it a reliable choice for power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $2.01 | $2.01 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage range is 4.5V to 20V.
It comes in an 8-SOIC (0.154", 3.90mm width) package with exposed pad, surface mount.
The operating temperature range is -40°C to 125°C junction temperature.
The MIC4123YME-TR has two independent driver channels.
It can drive N-channel and P-channel MOSFETs.
Each channel provides 3A of output current.
The input type is inverting.