MHW5222A The Motorola Semiconductor MHW5222A is an RF Power MOSFET designed for amplifier applications. It features a 65V breakdown voltage and a 28A maximum drain current.
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MHW5222A

Available from 1 distributors
Mfr Name: Motorola Semicondutor
Motorola Semicondutor
The Motorola Semiconductor MHW5222A is an RF Power MOSFET designed for amplifier applications. It features a 65V breakdown voltage and a 28A maximum drain current.
✓ Total Stock: 25 pcs
$ Price Range: $1.93

MHW5222A Available from 1 distributor

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MHW5222A Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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MHW5222A Description

Short technical summary and product information.

The Motorola Semiconductor MHW5222A is a high-performance RF Power MOSFET suitable for amplifier applications. This N-channel, Metal-Oxide Semiconductor device operates within the 2.3GHz to 2.4GHz frequency range, delivering up to 20W of output power.

 

Key electrical characteristics include a minimum breakdown voltage of 65V and a maximum drain current of 28A. The device is tested at 28V and 900mA, providing a typical gain of 18dB. Its N-channel configuration and LDMOS technology are optimized for RF power applications.

 

The MHW5222A is supplied in an SOT-502A package, designed for surface mounting. The standard package quantity is 100 units, and it is available on tape and reel for automated assembly processes. This component is RoHS and Lead-Free compliant, making it suitable for modern electronic designs.

MHW5222A Quick Information

Product Type: RF Power MOSFET
Canonical Name: Motorola Semicondutor MHW5222A RF Power MOSFET
Subcategory: RF Power

MHW5222A Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected
Lead Free: Yes

MHW5222A Estimated Pricing

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1+ $1.93 $1.93

Estimated market price range - modelled values for guidance only, not live distributor offers.

MHW5222A Features

  • N-channel RF Power MOSFET
  • 65V minimum breakdown voltage
  • 28A maximum drain current
  • 2.3GHz to 2.4GHz frequency range
  • SOT-502A surface mount package

MHW5222A Applications

  • Suitable for RF power amplifier applications.
  • Used in high-frequency RF transmitter circuits.
  • Ideal for N-CHANNEL RF power transistor designs.
  • Applicable in industrial automation RF control systems.
  • Designed for high-voltage RF switching applications.

MHW5222A FAQs

7 frequently asked questions generated from this part’s specifications.
What is the maximum drain current for the MHW5222A?

The maximum drain current (ID) for the MHW5222A is 28A.

What is the minimum breakdown voltage of the MHW5222A?

The minimum breakdown voltage (DS Breakdown Voltage-Min) for the MHW5222A is 65V.

What is the operating frequency range for the MHW5222A?

The MHW5222A operates in the frequency range of 2.3GHz to 2.4GHz.

What is the typical gain of the MHW5222A?

The typical gain for the MHW5222A is 18dB.

What is the output power of the MHW5222A?

The typical output power for the MHW5222A is 20W.

What type of transistor is the MHW5222A?

The MHW5222A is an RF Power MOSFET with an N-channel configuration.

What package is the MHW5222A supplied in?

The MHW5222A is supplied in an SOT-502A package.

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