| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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25 pcs
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25 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Motorola Semiconductor MHW5222A is a high-performance RF Power MOSFET suitable for amplifier applications. This N-channel, Metal-Oxide Semiconductor device operates within the 2.3GHz to 2.4GHz frequency range, delivering up to 20W of output power.
Key electrical characteristics include a minimum breakdown voltage of 65V and a maximum drain current of 28A. The device is tested at 28V and 900mA, providing a typical gain of 18dB. Its N-channel configuration and LDMOS technology are optimized for RF power applications.
The MHW5222A is supplied in an SOT-502A package, designed for surface mounting. The standard package quantity is 100 units, and it is available on tape and reel for automated assembly processes. This component is RoHS and Lead-Free compliant, making it suitable for modern electronic designs.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.93 | $1.93 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum drain current (ID) for the MHW5222A is 28A.
The minimum breakdown voltage (DS Breakdown Voltage-Min) for the MHW5222A is 65V.
The MHW5222A operates in the frequency range of 2.3GHz to 2.4GHz.
The typical gain for the MHW5222A is 18dB.
The typical output power for the MHW5222A is 20W.
The MHW5222A is an RF Power MOSFET with an N-channel configuration.
The MHW5222A is supplied in an SOT-502A package.