| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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3,569 pcs
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3569 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MHVIC910HNR2 is a high-performance RF LDMOS Integrated Circuit developed by NXP Semiconductors, specifically engineered for GSM base station applications. This device utilizes advanced High Voltage LDMOS IC technology, operating at 26 Volts. It incorporates a three-stage amplifier design, delivering a typical gain of 39dB and a P1dB (output power at 1dB compression) of 40dBm across a frequency range of 921MHz to 960MHz. The integrated circuit is designed for surface mount installation and comes in a 16-PFP package, with a standard package often presented as 16-SOP.
With a typical current consumption of 150mA, the MHVIC910HNR2 is suitable for demanding RF applications where efficiency and power are critical. Its robust design makes it a reliable component for cellular infrastructure. The device is specified as RoHS3 Compliant, with an MSL rating of 1, indicating unlimited shelf life under standard conditions. REACH status is listed as unaffected.
This RF amplifier is a key component for building efficient and powerful GSM communication systems. Its specifications are tailored for the specific requirements of cellular base stations, ensuring reliable signal amplification and transmission.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.98 | $0.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MHVIC910HNR2 operates at 26V.
The MHVIC910HNR2 operates in the frequency range of 921MHz to 960MHz.
The typical gain for the MHVIC910HNR2 is 39dB.
The P1dB of the MHVIC910HNR2 is 40dBm.
The MHVIC910HNR2 is supplied in a 16-PFP package.
The MHVIC910HNR2 is designed for surface mount installation.