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MHVIC910HNR2 The MHVIC910HNR2 is an RF LDMOS Integrated Circuit from NXP Semiconductors designed for GSM base stations. It operates at 26V and offers significant gain and power output.
Mfr Part #:

MHVIC910HNR2

Available from 1 distributors
Mfr Name: NXP Semiconductors
NXP Semiconductors
The MHVIC910HNR2 is an RF LDMOS Integrated Circuit from NXP Semiconductors designed for GSM base stations. It operates at 26V and offers significant gain and power output.
Total Stock: 3,569 pcs
$ Price Range: $0.98

MHVIC910HNR2 Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
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3,569 pcs
3569 pcs On Request 1 On Request On Request On Request On Request On Request

MHVIC910HNR2 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Frequency
Gain
Mounting Type
P1dB
RF Type
Supplier Device Package
Voltage

MHVIC910HNR2 Description

Short technical summary and product information.

The MHVIC910HNR2 is a high-performance RF LDMOS Integrated Circuit developed by NXP Semiconductors, specifically engineered for GSM base station applications. This device utilizes advanced High Voltage LDMOS IC technology, operating at 26 Volts. It incorporates a three-stage amplifier design, delivering a typical gain of 39dB and a P1dB (output power at 1dB compression) of 40dBm across a frequency range of 921MHz to 960MHz. The integrated circuit is designed for surface mount installation and comes in a 16-PFP package, with a standard package often presented as 16-SOP.

 

With a typical current consumption of 150mA, the MHVIC910HNR2 is suitable for demanding RF applications where efficiency and power are critical. Its robust design makes it a reliable component for cellular infrastructure. The device is specified as RoHS3 Compliant, with an MSL rating of 1, indicating unlimited shelf life under standard conditions. REACH status is listed as unaffected.

 

This RF amplifier is a key component for building efficient and powerful GSM communication systems. Its specifications are tailored for the specific requirements of cellular base stations, ensuring reliable signal amplification and transmission.

MHVIC910HNR2 Quick Information

Product Type: RF LDMOS Integrated Circuit
Canonical Name: MHVIC910HNR2 GSM Cellular RF LDMOS Integrated Circuit
Subcategory: LDMOS Integrated Circuit

MHVIC910HNR2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MHVIC910HNR2 Estimated Pricing

Qty Low High
1+ $0.98 $0.98

Estimated market price range - modelled values for guidance only, not live distributor offers.

MHVIC910HNR2 Features

  • Designed for GSM cellular base stations.
  • High Voltage 26V LDMOS IC technology.
  • Features a three-stage amplifier.
  • Offers 39dB typical gain.
  • Provides 40dBm typical P1dB.

MHVIC910HNR2 Applications

  • Used in RF front-end modules
  • Suitable for cellular communication systems
  • Ideal for wireless signal amplification
  • Integrated into GSM transceivers

MHVIC910HNR2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating voltage for the MHVIC910HNR2?

The MHVIC910HNR2 operates at 26V.

What is the frequency range of the MHVIC910HNR2?

The MHVIC910HNR2 operates in the frequency range of 921MHz to 960MHz.

What is the typical gain of the MHVIC910HNR2?

The typical gain for the MHVIC910HNR2 is 39dB.

What is the P1dB of the MHVIC910HNR2?

The P1dB of the MHVIC910HNR2 is 40dBm.

What is the package type for the MHVIC910HNR2?

The MHVIC910HNR2 is supplied in a 16-PFP package.

How is the MHVIC910HNR2 mounted?

The MHVIC910HNR2 is designed for surface mount installation.

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