MHV5IC2215NR2 The Freescale Semiconductor MHV5IC2215NR2 is a wideband integrated RF LDMOS power amplifier designed for base station applications. It operates from 1500 to 2200 MHz and delivers up to 15W of output power.
Mfr Part #:

MHV5IC2215NR2

Available from 1 distributors
Mfr Name: Freescale Semiconductor
Freescale Semiconductor
The Freescale Semiconductor MHV5IC2215NR2 is a wideband integrated RF LDMOS power amplifier designed for base station applications. It operates from 1500 to 2200 MHz and delivers up to 15W of output power.
Total Stock: 9,996 pcs
$ Price Range: $2.21

MHV5IC2215NR2 Available from 1 distributor

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Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
9,996 pcs
9996 pcs On Request 1 On Request On Request 07+ On Request On Request

MHV5IC2215NR2 Specifications Quick View

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MHV5IC2215NR2 Description

Short technical summary and product information.

The MHV5IC2215NR2 from Freescale Semiconductor is a high-performance, wideband integrated RF LDMOS power amplifier designed for demanding base station applications. Utilizing Freescale's High Voltage (28 Volts) LDMOS IC technology, this device features a two-stage structure with on-chip matching for simplified design and broad usability across the 1500 to 2200 MHz frequency range.

 

This amplifier is characterized for various cellular modulation formats, including TD-SCDMA, and offers excellent linearity. Typical performance for single-carrier N-CDMA includes 27.5 dB power gain and -60 dBc ACPR at an 885 kHz offset. For W-CDMA applications, typical performance shows 24 dB power gain and -55 dBc ACPR at a 5 MHz offset, with a typical output power of 23 dBm at 28V.

 

The MHV5IC2215NR2 is capable of handling a 3:1 VSWR at 28 Vdc and 2170 MHz with 15 Watts CW output power. It features on-chip matching for a 50 Ohm input and greater than 5 Ohm output, integrated quiescent current temperature compensation with enable/disable functionality, and on-chip current mirror gm reference FET for self-biasing applications. The device also includes integrated ESD protection.

 

Packaged in a PFP-16 case, the MHV5IC2215NR2 is available in tape and reel, with 1,500 units per reel. Its robust design and comprehensive features make it suitable for advanced wireless infrastructure.

MHV5IC2215NR2 Quick Information

Product Type: RF Power Amplifier
Canonical Name: MHV5IC2215NR2 RF LDMOS Wideband Integrated Power Amplifier
Subcategory: Wideband Integrated Power Amplifier

MHV5IC2215NR2 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MHV5IC2215NR2 Estimated Pricing

Qty Low High
1+ $2.21 $2.21

Estimated market price range - modelled values for guidance only, not live distributor offers.

MHV5IC2215NR2 Features

  • Wideband integrated RF LDMOS power amplifier.
  • Designed for base station applications.
  • Operates from 1500 to 2200 MHz.
  • Provides up to 15W CW output power.
  • Features on-chip matching for 50 Ohm input.

MHV5IC2215NR2 Applications

  • Suitable for cellular base stations.
  • Ideal for N-CDMA systems.
  • Well-suited for W-CDMA systems.
  • Supports TD-SCDMA modulation formats.

MHV5IC2215NR2 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the operating frequency range of the MHV5IC2215NR2?

The MHV5IC2215NR2 operates across a frequency range of 1500 to 2200 MHz.

What is the typical output power of the MHV5IC2215NR2 for W-CDMA applications?

The typical output power for W-CDMA applications is 23 dBm at 28 Volts.

What is the typical power gain for N-CDMA applications?

The typical power gain for single-carrier N-CDMA performance is 27.5 dB.

What is the input impedance of the MHV5IC2215NR2?

The input impedance is 50 Ohms.

What is the maximum operating junction temperature?

The maximum operating junction temperature is 150 °C.

How is the MHV5IC2215NR2 packaged?

The MHV5IC2215NR2 is supplied in a PFP-16 package and is available in tape and reel.

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