| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
8,814 pcs
|
8814 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Storage Temperature | |
| Tape & Reel |
The MHT2012NT1 from NXP Semiconductors is an RF LDMOS Power Amplifier designed for demanding RF applications. This component is compliant with RoHS3 standards and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for a wide range of environmental conditions.
As an RF power amplifier, the MHT2012NT1 is engineered to provide high performance in signal amplification tasks within radio frequency systems. Its specific electrical characteristics and application suitability would typically be detailed in the manufacturer's datasheet.
While detailed packaging and mounting information is not available from the provided data, components of this nature are often designed for surface-mount or specific module integration to ensure optimal performance and thermal management in high-frequency circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.98 | $0.98 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The MHT2012NT1 is RoHS3 Compliant.
The MSL for the MHT2012NT1 is 1 Unlimited.
The REACH status for the MHT2012NT1 is Unaffected.
