| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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30 pcs
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30 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The MHL21336N from Freescale Semiconductor is an RF Linear LDMOS Amplifier specifically designed for ultra-linear amplifier applications within the 3G frequency band. Operating in 50 ohm systems, this silicon FET Class A design provides excellent linearity and gain.
Key electrical characteristics include a typical power gain of 31 dB at 2140 MHz, a typical third-order intercept of 45 dBm, and a typical noise figure of 4.5 dB at 2170 MHz. The amplifier is designed for operation with a DC supply voltage of up to 30 Vdc and an RF input power of +5 dBm.
This device is ideal for feedforward base station applications, offering excellent phase linearity and group delay characteristics suitable for digital CDMA modulation systems. The operating case temperature range is -20 to +100 °C.
The MHL21336N is supplied in a 301AP-02 package. It is noted as being replaced by the MHL21336NN, with no form, fit, or function changes.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
30 Vdc.
301AP-02 surface mount package.
-20 to +100 °C.
2110-2170 MHz.
31 dB at 2140 MHz.
35 dBm typical (3 W).
-40 to +100 °C.