| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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2,692 pcs
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2692 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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2,518 pcs
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2518 pcs | On Request | 1 | On Request | On Request | 0950+ | On Request | On Request | |
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1,985 pcs
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1985 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
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566 pcs
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566 pcs | On Request | 1 | On Request | On Request | 0641P/ | On Request | On Request | |
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215 pcs
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215 pcs | On Request | 1 | On Request | On Request | On Request | On Request | 2026-04-21 11:15:10 |
| Category | |
| Manufacturer Name | |
| Current | |
| Drain to Source Voltage (Vdss) | |
| Drive Voltage (Max Rds On, Min Rds On) | |
| FET Type | |
| Input Capacitance (Ciss) (Max) @ Vds | |
| Mounting Type | |
| Operating Temperature | |
| Power Dissipation (Max) | |
| Rds On (Max) @ Id, Vgs | |
| Supplier Device Package | |
| Tape & Reel | |
| Technology | |
| Vgs (Max) | |
| Vgs(th) (Max) @ Id |
The MGSF1N02LT1 from On Semiconductor is an N-Channel MOSFET designed for power management in space-sensitive applications. It offers a drain-to-source voltage (Vdss) of 20V and a continuous drain current (Id) of 750mA at 25°C ambient temperature.
This MOSFET features a low static drain-to-source on-resistance (Rds(on)) of 90mOhm at 1.2A drain current and 10V gate-to-source voltage, contributing to higher efficiency and extended battery life in portable devices. The gate threshold voltage (Vgs(th)) is typically 1.7V, with a maximum of 2.4V at 250µA.
The device operates within a temperature range of -55°C to 150°C (TJ). It is packaged in a miniature SOT-23-3 surface mount package, saving valuable board space. Typical applications include DC-DC converters and power management in battery-powered products such as computers, printers, cellular phones, and cordless telephones.
Key electrical characteristics include a maximum gate-to-source voltage of ±20V and an input capacitance (Ciss) of 125pF at 5V. The total power dissipation is rated at 400mW (Ta).
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The drain-to-source voltage (Vdss) is 20V.
The continuous drain current is 750mA at 25°C ambient temperature.
The typical static drain-to-source on-resistance is 90mOhm at 1.2A drain current and 10V gate-to-source voltage.
The operating and storage temperature range is -55°C to 150°C (TJ).
The MGSF1N02LT1 is supplied in a SOT-23-3 (TO-236) surface mount package.
Yes, the MGSF1N02LT1 is RoHS3 compliant.