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MGFS45V2527A-01 The MGFS45V2527A-01 is an internally impedance-matched GaAs power FET from Mitsubishi Electronic, designed for 2.5-2.7 GHz amplifiers. It offers 32W of power output and operates in Class A.
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MGFS45V2527A-01

Available from 1 distributors
Mfr Name: Mitsubishi Electronic
Mitsubishi Electronic
The MGFS45V2527A-01 is an internally impedance-matched GaAs power FET from Mitsubishi Electronic, designed for 2.5-2.7 GHz amplifiers. It offers 32W of power output and operates in Class A.
✓ Total Stock: 5 pcs
$ Price Range: $1.20

MGFS45V2527A-01 Available from 1 distributor

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✓ Non-Authorised
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Bristol Electronics ✓
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5 pcs
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5 pcs On Request 1 On Request On Request On Request On Request On Request
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MGFS45V2527A-01 Specifications Quick View

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MGFS45V2527A-01 Description

Short technical summary and product information.

The MGFS45V2527A-01 is a high-reliability GaAs power FET specifically engineered for amplifiers operating in the 2.5 to 2.7 GHz frequency band. This internally impedance-matched device delivers a power output of 32W and is designed for Class A operation, ensuring linearity and stability in amplification circuits.

 

The FET utilizes a hermetically sealed metal-ceramic package, which guarantees high reliability and robust performance in demanding applications. Its internal matching simplifies circuit design and reduces component count, making it suitable for various RF power applications.

 

Key specifications include operation within the 2.5-2.7 GHz band, a 32W power output, and Class A operation. The use of GaAs technology provides excellent high-frequency performance characteristics essential for modern communication systems.

MGFS45V2527A-01 Quick Information

Product Type: RF Power Field-Effect Transistor
Canonical Name: MGFS45V2527A-01 RF Power Field-Effect Transistor, N-Channel
Subcategory: RF Power FET

MGFS45V2527A-01 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MGFS45V2527A-01 Estimated Pricing

Qty Low High
1+ $1.20 $1.20

Estimated market price range - modelled values for guidance only, not live distributor offers.

MGFS45V2527A-01 Features

  • 32W internally matched GaAs FET.
  • Designed for 2.5-2.7 GHz band amplifiers.
  • Features Class A operation for linearity.
  • Hermetically sealed metal-ceramic package.
  • High reliability for demanding applications.

MGFS45V2527A-01 Applications

  • Used in 2.5-2.7 GHz RF amplifiers.
  • Suitable for linear power amplification.
  • Ideal for high-reliability communication systems.

MGFS45V2527A-01 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the frequency band for the MGFS45V2527A-01?

The MGFS45V2527A-01 is designed for the 2.5 - 2.7 GHz frequency band.

What is the power output of the MGFS45V2527A-01?

The MGFS45V2527A-01 has a power output of 32W.

What type of technology does the MGFS45V2527A-01 use?

The MGFS45V2527A-01 uses GaAs FET technology.

What is the matching configuration of the MGFS45V2527A-01?

The MGFS45V2527A-01 is internally matched.

What is the operation class of the MGFS45V2527A-01?

The MGFS45V2527A-01 operates in Class A.

What is the package type for the MGFS45V2527A-01?

The MGFS45V2527A-01 comes in a hermetically sealed metal-ceramic package.

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