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MGF4919G The Mitsubishi Electric MGF4919G is a super low-noise HEMT designed for L to Ku band amplifiers. It features a hermetically sealed metal-ceramic package.
Mfr Part #:

MGF4919G

Available from 1 distributors
Mfr Name: Mitsubishi Electronic
Mitsubishi Electronic
The Mitsubishi Electric MGF4919G is a super low-noise HEMT designed for L to Ku band amplifiers. It features a hermetically sealed metal-ceramic package.
✓ Total Stock: 197 pcs
$ Price Range: $0.99

MGF4919G Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Braun Electronic Components ✓
Non-Authorised Inventory information
197 pcs
On Request
197 pcs On Request 1 On Request On Request On Request On Request On Request
DistyParts aggregates offers from multiple distributors. Final prices, lead times and terms are subject to the distributors' discretion and may change without prior notice. DistyParts is not liable for any discrepancies.

MGF4919G Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Mounting Type
Operating Temperature
Power Dissipation
SVHC Present
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MGF4919G Description

Short technical summary and product information.

The MGF4919G from Mitsubishi Electric is a super low-noise High Electron Mobility Transistor (HEMT) specifically designed for use in amplifiers operating within the L to Ku frequency bands.

 

This component features a maximum power dissipation of 50mW and can operate at temperatures up to 125°C. The device is housed in a hermetically sealed metal-ceramic package, which minimizes parasitic losses and is suitable for microstrip circuit configurations.

 

Its design makes it ideal for applications requiring high performance in RF amplification within the specified frequency range. The metal-ceramic package ensures reliability and suitability for various electronic designs.

MGF4919G Quick Information

Product Type: HEMT
Series: MGF491xG
Canonical Name: MGF4919G High Electron Mobility Transistor
Subcategory: High Electron Mobility Transistor

MGF4919G Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MGF4919G Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MGF4919G Features

  • Super low-noise HEMT for L to Ku band.
  • 50mW maximum power dissipation.
  • 125°C maximum operating temperature.
  • Hermetically sealed metal-ceramic package.
  • Suitable for microstrip circuits.

MGF4919G Applications

  • Designed for L to Ku band amplifiers.
  • Suitable for super-low-noise amplification.
  • Hermetic package minimizes parasitic losses.
  • Configuration suitable for microstrip circuits.

MGF4919G FAQs

3 frequently asked questions generated from this part’s specifications.
What is the power dissipation of the MGF4919G?

The MGF4919G has a maximum power dissipation of 50mW.

What is the maximum operating temperature for the MGF4919G?

The maximum operating temperature for the MGF4919G is 125°C.

What type of package does the MGF4919G use?

The MGF4919G uses a hermetically sealed metal-ceramic package.

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