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MGF1801B The Mitsubishi MGF1801B is a medium-power GaAs FET designed for S to X band amplifiers and oscillators. It offers high output power and linear gain.
Mfr Part #:

MGF1801B

Available from 1 distributors
Mfr Name: MIT
MIT
The Mitsubishi MGF1801B is a medium-power GaAs FET designed for S to X band amplifiers and oscillators. It offers high output power and linear gain.
✓ Total Stock: 2,029 pcs

MGF1801B Available from 1 distributor

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✓ Non-Authorised
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Optech Co.,Limited ✓
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2,029 pcs
On Request
2029 pcs On Request 1 On Request On Request 24+ On Request On Request
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MGF1801B Specifications Quick View

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MGF1801B Description

Short technical summary and product information.

The MGF1801B from Mitsubishi is a medium-power GaAs FET featuring an N-channel Schottky gate. It is specifically designed for use in S to X band amplifiers and oscillators.

 

Key electrical characteristics include a typical output power at 1dB gain compression (P1dB) of 23dBm at 8GHz, and a typical linear power gain (GLP) of 9dB at 8GHz. The device operates with recommended bias conditions of VDS=6V and ID=100mA.

 

This hermetically sealed metal-ceramic package ensures minimum parasitic losses and is suitable for microstrip circuits. The MGF1801B is designed for high reliability and stability in demanding RF applications.

 

Applications include medium-power amplifiers and oscillators operating within the S to X frequency bands.

MGF1801B Quick Information

Product Type: GaAs FET
Canonical Name: MGF1801B GaAs FET
Subcategory: RF Power FET

MGF1801B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MGF1801B Features

  • Medium-power GaAs FET for RF applications.
  • Designed for S to X band amplifiers.
  • 23dBm typical output power at 8GHz.
  • 9dB typical linear power gain at 8GHz.
  • Hermetically sealed metal-ceramic package.

MGF1801B Applications

  • Medium-power S to X band amplifiers
  • S to X band oscillator circuits
  • High-frequency microwave power amplification
  • Microstrip RF circuit designs

MGF1801B FAQs

6 frequently asked questions generated from this part’s specifications.
What is the typical output power at 1dB gain compression for the MGF1801B?

The typical output power at 1dB gain compression (P1dB) for the MGF1801B is 23dBm at 8GHz.

What is the typical linear power gain of the MGF1801B at 8GHz?

The typical linear power gain (GLP) of the MGF1801B is 9dB at 8GHz.

What are the recommended bias conditions for the MGF1801B?

The recommended bias conditions for the MGF1801B are VDS=6V and ID=100mA.

What is the operating frequency range for the MGF1801B?

The MGF1801B is designed for use in S to X band amplifiers and oscillators.

What is the RoHS status of the MGF1801B?

The RoHS status is RoHS3 Compliant.

What is the Moisture Sensitivity Level (MSL) for the MGF1801B?

The Moisture Sensitivity Level (MSL) is 1 Unlimited.

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