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MGF0906B The MGF0906B is a GaAs FET from Panasonic Electronic Components, designed for L & S band applications. It features a breakdown voltage of 10V and a power dissipation of 23W.
Mfr Part #:

MGF0906B

Available from 1 distributors
Mfr Name: Panasonic Electronic Components
Panasonic Electronic Components
The MGF0906B is a GaAs FET from Panasonic Electronic Components, designed for L & S band applications. It features a breakdown voltage of 10V and a power dissipation of 23W.
✓ Total Stock: 19 pcs

MGF0906B Available from 1 distributor

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✓ Non-Authorised
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Husky International Electronic ✓
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19 pcs
On Request
19 pcs On Request 1 On Request On Request N/A On Request On Request
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MGF0906B Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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Operating Temperature
Power Dissipation
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MGF0906B Description

Short technical summary and product information.

The MGF0906B is a Gallium Arsenide (GaAs) Field-Effect Transistor (FET) manufactured by Panasonic Electronic Components. This N-channel Schottky gate FET is specifically engineered for applications operating in the L and S frequency bands.

 

Key electrical specifications include a minimum breakdown voltage of 10V and a maximum power dissipation of 23W. The device is designed to operate at high temperatures, with a maximum operating temperature of 175°C.

 

This component is suitable for various RF power applications within the L and S bands. Its robust design and specified operating parameters make it a reliable choice for demanding electronic systems.

MGF0906B Quick Information

Product Type: GaAs FET
Canonical Name: GaAs FET
Subcategory: GaAs FET

MGF0906B Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MGF0906B Features

  • GaAs FET for L & S band applications.
  • N-channel Schottky gate design.
  • Minimum breakdown voltage of 10V.
  • Maximum power dissipation of 23W.
  • High maximum operating temperature of 175°C.

MGF0906B Applications

  • Designed for L and S band applications
  • Suitable for GaAs FET RF circuits
  • Used in high-power GaAs FET designs
  • Ideal for N-channel schottky gate devices

MGF0906B FAQs

5 frequently asked questions generated from this part’s specifications.
What is the breakdown voltage of the MGF0906B?

The minimum breakdown voltage is 10V.

What is the maximum power dissipation for the MGF0906B?

The maximum power dissipation is 23W.

What is the maximum operating temperature for this FET?

The maximum operating temperature is 175°C.

What type of gate does the MGF0906B have?

It has an N-channel Schottky gate.

For which frequency bands is the MGF0906B designed?

It is designed for L & S band applications.

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