| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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43 pcs
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43 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Sanken MGD623N is a 600V Trench Insulated Gate Bipolar Transistor (IGBT) featuring Sanken's original trench structure for reduced gate capacitance, enabling high-speed switching and lower switching losses. This device is rated for a continuous collector current of 50A at 25°C and 37A at 100°C, with a maximum power dissipation of 150W.
Key electrical characteristics include a low saturation voltage (VCE(sat)) of 1.7V typical at 50A and a gate threshold voltage (VGE(TH)) between 3V and 6V. The integrated fast recovery diode has a typical forward voltage (VF) of 1.2V and a reverse recovery time (trr) of 300ns.
The MGD623N is housed in a TO-3P-3 Full Pack package, suitable for through-hole mounting. Its operating junction temperature range is -55°C to 150°C.
Applications for this IGBT include microwave ovens, IH cookers, and inverter circuits, where its efficiency and switching performance are beneficial.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector to emitter voltage (VCE) for the MGD623N is 600 V.
The MGD623N has a continuous collector current rating of 50 A at 25°C and 37 A at 100°C.
The MGD623N has a power dissipation of 150 W at 25°C.
The MGD623N is supplied in a TO-3P-3 Full Pack package.
The operating junction temperature (TJ) for the MGD623N ranges from -55°C to 150°C.
Yes, the MGD623N features an integrated low VF fast recovery diode.