MGD623N The Sanken MGD623N is a 600V, 50A Trench IGBT with an integrated fast recovery diode, designed for high-speed switching applications. It comes in a TO-3P package.
Mfr Part #:

MGD623N

Available from 1 distributors
Mfr Name: Sanken
Sanken
The Sanken MGD623N is a 600V, 50A Trench IGBT with an integrated fast recovery diode, designed for high-speed switching applications. It comes in a TO-3P package.
Total Stock: 43 pcs
$ Price Range: $0.99

MGD623N Available from 1 distributor

Authorised
Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Non-Authorised Inventory information
43 pcs
43 pcs On Request 1 On Request On Request On Request On Request On Request

MGD623N Specifications Quick View

Most important parameters for selection – full specs in datasheet.
Category
Manufacturer Name
Current
Input Type
Mounting Type
Operating Temperature
Power
Power Dissipation
Reverse Recovery Time (trr)
Storage Temperature
Supplier Device Package
Supplier Package
Td (on
Test Condition
Vce(on) (Max) @ Vge, Ic
Voltage

MGD623N Description

Short technical summary and product information.

The Sanken MGD623N is a 600V Trench Insulated Gate Bipolar Transistor (IGBT) featuring Sanken's original trench structure for reduced gate capacitance, enabling high-speed switching and lower switching losses. This device is rated for a continuous collector current of 50A at 25°C and 37A at 100°C, with a maximum power dissipation of 150W.

 

Key electrical characteristics include a low saturation voltage (VCE(sat)) of 1.7V typical at 50A and a gate threshold voltage (VGE(TH)) between 3V and 6V. The integrated fast recovery diode has a typical forward voltage (VF) of 1.2V and a reverse recovery time (trr) of 300ns.

 

The MGD623N is housed in a TO-3P-3 Full Pack package, suitable for through-hole mounting. Its operating junction temperature range is -55°C to 150°C.

 

Applications for this IGBT include microwave ovens, IH cookers, and inverter circuits, where its efficiency and switching performance are beneficial.

MGD623N Quick Information

Product Type: IGBT Transistor
Canonical Name: MGD623N Trench IGBT with Fast Recovery Diode
Subcategory: Single

MGD623N Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MGD623N Estimated Pricing

Qty Low High
1+ $0.99 $0.99

Estimated market price range - modelled values for guidance only, not live distributor offers.

MGD623N Features

  • 600V collector to emitter voltage rating.
  • 50A continuous collector current capability.
  • 150W maximum power dissipation.
  • Integrated low VF fast recovery diode.
  • TO-3P package for through-hole mounting.

MGD623N Applications

  • Suitable for microwave oven applications.
  • Ideal for IH cooker designs.
  • Used in inverter circuit applications.
  • Designed for high-speed switching.

MGD623N FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector to emitter voltage for the MGD623N?

The maximum collector to emitter voltage (VCE) for the MGD623N is 600 V.

What is the continuous collector current rating of the MGD623N?

The MGD623N has a continuous collector current rating of 50 A at 25°C and 37 A at 100°C.

What is the power dissipation of the MGD623N?

The MGD623N has a power dissipation of 150 W at 25°C.

What type of package is the MGD623N in?

The MGD623N is supplied in a TO-3P-3 Full Pack package.

What is the operating temperature range for the MGD623N?

The operating junction temperature (TJ) for the MGD623N ranges from -55°C to 150°C.

Does the MGD623N have an integrated diode?

Yes, the MGD623N features an integrated low VF fast recovery diode.

Home
Account

Categories