| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
57 pcs
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57 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The Toshiba MG8Q6ES1 is an Insulated Gate Bipolar Transistor (IGBT) module, a critical component for inverter use in various industrial equipment. This module is engineered for high current and high voltage applications, featuring a robust 600V operating voltage and a 100A current rating.
Designed for demanding industrial environments, the MG8Q6ES1 is part of Toshiba's power module solutions. Its configuration is a 6-Pack, indicating a specific internal arrangement of transistors. The module is also noted as RoHS3 Compliant, REACH Unaffected, and has an MSL of 1 Unlimited, suggesting suitability for a wide range of manufacturing processes.
This IGBT module is essential for applications requiring efficient power conversion and control, commonly found in motor drives, power supplies, and other industrial automation systems. Its specifications make it a reliable choice for engineers designing high-performance power electronic systems.
| Qty | Low | High |
|---|---|---|
| 1+ | $103.07 | $103.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 600V.
The current rating is 100A.
The configuration is a 6-Pack.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.
The REACH status is REACH Unaffected.