BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba MG8N6ES42 is an Insulated Gate Bipolar Transistor (IGBT) designed for power electronics applications. This active component combines the advantages of bipolar transistors and MOSFETs, making it suitable for high-power switching tasks such as inverters, motor drives, and power supplies.
The device features an active product status and adheres to RoHS3 compliance standards. It also has a Moisture Sensitivity Level (MSL) of 1 Unlimited and is REACH Unaffected. The package type is specified as IGBT, indicating its role as a power semiconductor device.
This IGBT is ideal for engineers seeking reliable switching and amplification solutions in demanding power electronic systems. Its specifications support efficient operation in various industrial and commercial applications requiring robust power management.
| Qty | Low | High |
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| 1+ | $1.20 | $1.20 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
A TOSHIBA IGBT (Insulated Gate Bipolar Transistor) is a semiconductor device used for switching and amplifying electrical signals in power electronics applications. It combines the advantages of bipolar transistors and MOSFETs, making it ideal for high-power switching applications such as inverters, motor drives, and power supplies.
The manufacturer part number for this product is MG8N6ES42, which is a specific model identifier from TOSHIBA's IGBT pr
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) is 1 Unlimited.
The REACH status is REACH Unaffected.