| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
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1 pcs
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1 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name | |
| SVHC Present |
The Toshiba MG600J1US51 is an Insulated Gate Bipolar Transistor (IGBT) module, a critical component for inverter use in various industrial equipment. This module is rated for a high operating voltage of 600V and a substantial current capacity of 100A, making it suitable for demanding applications.
As an IGBT module, it combines the high input impedance of a MOSFET with the high-current and low-saturation-voltage capability of a bipolar transistor. This design facilitates efficient power switching and control in inverters.
The MG600J1US51 is specified as RoHS3 Compliant and has a Moisture Sensitivity Level (MSL) of 1, indicating it is suitable for standard handling and assembly processes. Its configuration is listed as 2-Pack.
Toshiba's IGBT modules are known for driving trends towards high currents and high voltages in industrial power electronics. This part is designed to deliver reliable performance in applications requiring robust power handling.
| Qty | Low | High |
|---|---|---|
| 1+ | $103.07 | $103.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The operating voltage is 600V.
The current rating is 100A.
The RoHS status is RoHS3 Compliant.
The MSL is 1 Unlimited.
The REACH status is REACH Unaffected.
The configuration is 2-Pack.