SL3S1206FUD2/HAA-VB2
NXP Semiconductors
The NXP Semiconductors SL3S1206FUD2/HAA-VB2 is a Chassis Mount Resistor. It is RoHS3 Compliant and REACH Unaffected.
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155 pcs
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155 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba MG50Q2YS9 is an N channel Insulated Gate Bipolar Transistor (IGBT) suitable for high power switching and motor control applications. It boasts a high collector-emitter voltage rating of 1200V and a maximum collector current of 100A for short durations (1ms).
Key electrical characteristics include a high input impedance, high speed switching with fall time and reverse recovery time of 0.5µs (max), and a low saturation voltage of 4.0V (max). The device operates in enhancement-mode and includes a complete half bridge in one package. The electrodes are isolated from the case, and it has an isolation voltage of 2500V.
With a maximum collector power dissipation of 400W and a junction temperature rating of 150℃, the MG50Q2YS9 is designed for demanding power applications. The storage temperature range is -40℃ to +125℃. The component is suitable for through-hole mounting.
| Qty | Low | High |
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| 1+ | $2.27 | $2.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The collector-emitter voltage is 1200V.
The maximum collector current is 100A for 1ms pulse.
The maximum junction temperature is 150℃.
The saturation voltage is a maximum of 4.0V.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level is 1 Unlimited.
