| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
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89 pcs
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89 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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| Manufacturer Name |
The Toshiba MG50N2YS1 is an IGBT module categorized under Transistor Modules. It is designed for robust power applications, offering a maximum collector current of 50A and a high collector-emitter voltage rating of 1kV.
This module has physical dimensions of 17.0 cm in length, 5.0 cm in width, and 4.0 cm in height, with a total weight of 1.0 kg. These specifications make it suitable for integration into various industrial and electronic systems where reliable power handling is essential.
The MG50N2YS1 is part of Toshiba's line of power semiconductor devices, known for their performance and durability in demanding environments. Its construction and ratings suggest applications in power conversion, motor control, and other high-power switching circuits.
| Qty | Low | High |
|---|---|---|
| 1+ | $0.99 | $0.99 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the Toshiba MG50N2YS1 is 50A.
The collector-emitter voltage of the MG50N2YS1 is 1kV.
The Toshiba MG50N2YS1 has 7 terminals.
The MG50N2YS1 module measures 17.0 cm in length, 5.0 cm in width, and 4.0 cm in height.
The weight of the Toshiba MG50N2YS1 is 1.0 kg.
The RoHS status is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MG50N2YS1 is 1 Unlimited.