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3 pcs
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3 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba MG50M2YK1 is a high-power NPN triple diffused type transistor module designed for demanding applications such as high power switching and motor control.
This module boasts a maximum collector current rating of 50A and can withstand a collector emitter voltage of up to 880V. It is constructed with 7 terminals, facilitating integration into complex circuits.
As a transistor module, the MG50M2YK1 is engineered for robust performance and reliability in industrial environments. Its specifications make it suitable for power management and control systems where high current and voltage handling are critical.
| Qty | Low | High |
|---|---|---|
| 1+ | $1.27 | $1.27 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current for the Toshiba MG50M2YK1 is 50A.
The collector emitter voltage of the MG50M2YK1 is 880V.
The Toshiba MG50M2YK1 has 7 terminals.
The Toshiba MG50M2YK1 is a Silicon NPN Triple Diffused Type transistor module.
The MG50M2YK1 is designed for High Power Switching and Motor Control Applications.