BC847B/215
Nexperia USA Inc.
The Nexperia USA Inc. BC847B/215 is a bipolar transistor. It is RoHS3 Compliant and has an MSL Level 1 rating.
| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
2 pcs
|
2 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| SVHC Present |
The Toshiba MG50J2YS1 is a GTR Module / Silicon N-Channel IGBT. This component is designed for power electronics applications requiring high voltage and current handling capabilities.
Key electrical specifications include a maximum Collector Emitter Voltage of 600V and a maximum Collector Current of 50A. The module has 7 terminals, facilitating its integration into various circuit designs.
This IGBT module is manufactured by Toshiba, a well-known producer of semiconductor devices. Its robust construction and specified electrical parameters make it suitable for demanding applications within industrial and power control systems.
Further details regarding package type, mounting, and specific operating conditions would typically be found in the manufacturer's datasheet.
| Qty | Low | High |
|---|---|---|
| 1+ | $103.07 | $103.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector emitter voltage for the MG50J2YS1 is 600V.
The maximum collector current for the MG50J2YS1 is 50A.
The MG50J2YS1 has 7 terminals.
The MG50J2YS1 is RoHS3 Compliant.
The Moisture Sensitivity Level (MSL) for the MG50J2YS1 is 1 Unlimited.
The MG50J2YS1 is REACH Unaffected.