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MG25Q6ES51 The Toshiba MG25Q6ES51 is an N CHANNEL IGBT module designed for high power switching and motor control applications. It features a maximum collector current of 35A and a collector emitter voltage of 1.2kV.
Mfr Part #:

MG25Q6ES51

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba MG25Q6ES51 is an N CHANNEL IGBT module designed for high power switching and motor control applications. It features a maximum collector current of 35A and a collector emitter voltage of 1.2kV.
✓ Total Stock: 195 pcs
$ Price Range: $103.07

MG25Q6ES51 Available from 1 distributor

✓ Authorised
✓ Non-Authorised
Distributor Stock Pricing MOQ PKG Lead Time Date Code On Order Quantity On Order Delivery
Bristol Electronics ✓
Non-Authorised Inventory information
195 pcs
On Request
195 pcs On Request 1 On Request On Request On Request On Request On Request
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MG25Q6ES51 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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MG25Q6ES51 Description

Short technical summary and product information.

The Toshiba MG25Q6ES51 is an N CHANNEL Insulated Gate Bipolar Transistor (IGBT) module, specifically engineered for high power switching and motor control applications. This component boasts a maximum collector current rating of 35A and a robust collector emitter voltage of 1.2kV, making it suitable for demanding industrial environments.

 

Key electrical characteristics include a maximum power dissipation of 200W and a collector emitter saturation voltage of 3.2V. The device operates within a maximum temperature of 125°C, ensuring reliability under thermal stress. Its design focuses on efficient power handling and control in systems requiring high voltage and current capabilities.

 

This IGBT module is part of Toshiba's line of power semiconductor devices, aimed at providing solutions for power electronics. Its specifications suggest suitability for applications such as variable speed drives, power supplies, and industrial automation equipment where precise and efficient power control is essential.

MG25Q6ES51 Quick Information

Product Type: IGBT Module
Canonical Name: Toshiba MG25Q6ES51 N CHANNEL IGBT
Subcategory: Modules

MG25Q6ES51 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MG25Q6ES51 Estimated Pricing

Qty Low High
1+ $103.07 $103.07

Estimated market price range - modelled values for guidance only, not live distributor offers.

MG25Q6ES51 Features

  • N CHANNEL IGBT module for power applications.
  • 1.2kV Collector Emitter Voltage rating.
  • 35A maximum collector current.
  • 200W maximum power dissipation.
  • 125°C maximum operating temperature.

MG25Q6ES51 Applications

  • Suitable for high power switching.
  • Designed for motor control applications.
  • Used in industrial automation systems.
  • Applicable for variable speed drives.

MG25Q6ES51 FAQs

5 frequently asked questions generated from this part’s specifications.
What is the maximum collector current for the MG25Q6ES51?

The maximum collector current for the MG25Q6ES51 is 35A.

What is the collector emitter voltage of the MG25Q6ES51?

The collector emitter voltage of the MG25Q6ES51 is 1.2kV.

What is the maximum power dissipation for the MG25Q6ES51?

The maximum power dissipation for the MG25Q6ES51 is 200W.

What is the maximum operating temperature of the MG25Q6ES51?

The maximum operating temperature of the MG25Q6ES51 is 125°C.

What applications is the Toshiba MG25Q6ES51 IGBT module designed for?

The Toshiba MG25Q6ES51 is designed for high power switching and motor control applications.

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