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50 pcs
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50 pcs | On Request | 1 | On Request | On Request | 24+ | On Request | On Request |
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The Toshiba MG200Q1US41 is a robust IGBT module engineered for reliable switching performance in industrial systems. It boasts a high collector-emitter voltage rating of 1200V and a continuous collector current capacity of 200A, making it suitable for applications such as motor drives, inverters, and UPS systems.
This module integrates fast-recovery diodes and gate-emitter Zener protection for enhanced switching speed and circuit robustness. It operates with a typical saturation voltage between 3-4V and supports a gate-emitter input of ±20V. The insulated package with a screw-mounted baseplate ensures excellent thermal conductivity and mechanical stability, allowing for power dissipation up to 1400W when properly cooled.
While considered an older model, the MG200Q1US41 remains a trusted solution for legacy systems. Its design prioritizes efficiency and reliability in demanding environments.
The collector-emitter voltage is 1200V.
The continuous collector current is 200A.
The saturation voltage is typically between 3-4V.
The power dissipation is up to 1400W when properly cooled.
It features a screw-mounted insulated package.