| Distributor | Stock | Pricing | MOQ | PKG | Lead Time | Date Code | On Order Quantity | On Order Delivery | |
|---|---|---|---|---|---|---|---|---|---|
|
31 pcs
|
31 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
| Category | |
| Manufacturer Name | |
| Industrial Grade | |
| SVHC Present | |
| Tape & Reel |
The Toshiba MG200Q1JS40 is a Silicon N Channel IGBT GTR Module. This component is designed for high-power applications, offering a maximum collector current of 200A and a collector emitter voltage rating of 1.2kV.
Key electrical characteristics include a typical collector emitter saturation voltage of 4V, a typical rise time of 600ns, and a typical fall time of 500ns. The module has a maximum power dissipation of 1.3kW and can operate at temperatures up to 150°C.
Packaged as a module, this IGBT is suitable for various industrial power applications. Its specifications suggest use in power conversion, motor control, and power supply systems where high current and voltage handling are required.
| Qty | Low | High |
|---|---|---|
| 1+ | $103.07 | $103.07 |
Estimated market price range - modelled values for guidance only, not live distributor offers.
The maximum collector current is 200A.
The collector emitter voltage is 1.2kV.
The typical collector emitter saturation voltage is 4V.
The maximum operating temperature is 150°C.
The package type is Module.
