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MG15N6ES40 The Toshiba MG15N6ES40 is an IGBT module designed for power applications. It features a 1100V collector-base voltage and a 15A collector current.
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MG15N6ES40

Available from 1 distributors
Mfr Name: Toshiba
Toshiba
The Toshiba MG15N6ES40 is an IGBT module designed for power applications. It features a 1100V collector-base voltage and a 15A collector current.
✓ Total Stock: 426 pcs
$ Price Range: $9.79

MG15N6ES40 Available from 1 distributor

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MG15N6ES40 Specifications Quick View

Most important parameters for selection – full specs in datasheet.
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MG15N6ES40 Description

Short technical summary and product information.

The Toshiba MG15N6ES40 is an IGBT module with a maximum collector-base voltage of 1100V and a maximum collector current of 15A. It offers a power dissipation of 150W and operates within a temperature range of -55 to +150℃.

 

Key electrical characteristics include a collector-emitter sustaining voltage of 900V and a DC current gain of 100. The module also specifies collector-emitter saturation voltage between 1.8V and 2.5V, and base-emitter saturation voltage between 2.6V and 3.5V.

 

This IGBT module is suitable for various power switching applications. Its robust design and specifications make it a reliable component for demanding electronic circuits. The operating temperature range ensures performance in diverse environmental conditions.

MG15N6ES40 Quick Information

Product Type: IGBT Module
Canonical Name: Toshiba MG15N6ES40 IGBT Module
Subcategory: Power Driver Modules

MG15N6ES40 Compliance

RoHS Status: RoHS Compliant
Moisture Sensitivity Level (MSL): 1 Unlimited
REACH Status: REACH Unaffected

MG15N6ES40 Estimated Pricing

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1+ $9.79 $9.79

Estimated market price range - modelled values for guidance only, not live distributor offers.

MG15N6ES40 Features

  • 1100V collector-base voltage rating.
  • 15A maximum collector current.
  • 150W power dissipation capability.
  • Wide -55 to +150℃ operating temperature.
  • 100 DC current gain.

MG15N6ES40 Applications

  • Suitable for power switching circuits.
  • Used in high voltage applications.
  • Ideal for power management systems.
  • Component for industrial electronics.

MG15N6ES40 FAQs

6 frequently asked questions generated from this part’s specifications.
What is the maximum collector-base voltage for the MG15N6ES40?

The maximum collector-base voltage (VCBO) for the MG15N6ES40 is 1100V.

What is the maximum collector current of the MG15N6ES40 IGBT module?

The MG15N6ES40 IGBT module has a maximum collector current of 15A.

What is the power dissipation of the MG15N6ES40?

The power dissipation for the MG15N6ES40 is 150W.

What is the operating temperature range for the MG15N6ES40?

The operating and storage temperature range for the MG15N6ES40 is -55 to +150℃.

What is the DC current gain (hFE) of the MG15N6ES40?

The DC current gain (hFE) for the MG15N6ES40 is 100.

What are the saturation voltage ranges for the MG15N6ES40?

The collector-emitter saturation voltage (VCE) is between 1.8V and 2.5V, and the base-emitter saturation voltage (VBE) is between 2.6V and 3.5V.

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