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27 pcs
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27 pcs | On Request | 1 | On Request | On Request | On Request | On Request | On Request | |
| On Request | On Request | 1 | On Request | On Request | On Request | On Request | On Request |
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The Toshiba MG150Q2YS40 is an N-Channel Insulated Gate Bipolar Transistor (IGBT) module manufactured by Toshiba, suitable for high power switching and motor control applications.
This module features a maximum collector current rating of 150A and a collector-emitter voltage of 1.2kV. It has a typical collector emitter saturation voltage of 4V, a rise time of 600ns, and a fall time of 500ns. The maximum power dissipation is 1.1kW, and it can operate at temperatures up to 150°C.
The MG150Q2YS40 comes in a module package with 7 terminals. Its specifications make it suitable for demanding power electronic designs where high current and voltage handling are required.
Key electrical characteristics include a maximum collector current of 150A and a collector-emitter voltage of 1.2kV. The device is designed for efficient switching with specified rise and fall times.
150A.
1.2kV.
1.1kW.
The maximum operating temperature is 150°C.
Module with 7 terminals.
Typical rise time is 600ns and fall time is 500ns.
Typical collector-emitter saturation voltage is 4V.